 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| J/SST270 Series P-Channel JFETs J270 J271 Product Summary Part Number J/SST270 J/SST271 SST270 SST271 VGS(off) (V) 0.5 to 2.0 1.5 to 4.5 V(BR)GSS Min (V) gfs Min (mS) 30 30 6 8 IDSS Min (mA) -2 -6 Features D D D D Low Cutoff Voltage: J270 <2 V High Input Impedance Very Low Noise High Gain Benefits D Full Performance from Low-Voltage Power Supply: Down to 2 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality, Low-Level Signal Amplification Applications D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers D High-Side Switching Description The J/SST270 series consists of all-purpose amplifiers for designs requiring p-channel operation. The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package TO-226AA (TO-92) D 1 D G 2 S S 3 Top View Top View J270 J271 SST270 (S0)* SST271 (S1)* *Marking Code for TO-236 2 1 3 G provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-236 (SOT-23) Absolute Maximum Ratings Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70258. Siliconix P-37405--Rev. B, 04-Jul-94 1 J/SST270 Series Specificationsa Limits J/SST270 J/SST271 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Drain Cutoff Current Gate-Source Forward Voltage Symbol Test Conditions Typb Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -1 nA VDS = -15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 125_C VDG = -15 V, ID = -1 mA VDS = -15 V, VGS = 10 V IG = -1 mA , VDS = 0 V 45 30 0.5 -2 2.0 -15 200 30 1.5 -6 4.5 -50 200 V mA pA nA pA 10 5 10 -10 -0.7 V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en VDS = -15 V, VGS = 0 V f = 1 kH kHz 20 VDS = -15 V VGS = 0 V 15 V, f = 1 MHz VDG = -10 V, VGS = 0 V f = 1 kHz 4 20 nV Hz PSCIA pF 6 15 200 8 18 500 mS mS Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. Typical Characteristics 200 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage IDSS -100 g fs - Forward Transconductance (mS) I DSS - Saturation Drain Current (mA) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 18 250 160 rDS -80 15 gfs 12 gos 200 g os - Output Conductance ( mS) 120 -60 150 80 -40 9 100 40 rDS @ ID = -1 mA, VGS = 0 V IDSS @ VDS = -15 V, VGS = 0 V 0 0 2 4 6 8 10 VGS(off) - Gate-Source Cutoff Voltage (V) -20 6 gfs and gos @ VDS = -15 V VGS = 0 V, f = 1 kHz 3 0 2 4 6 8 VGS(off) - Gate-Source Cutoff Voltage (V) 50 0 0 10 2 Siliconix P-37405--Rev. B, 04-Jul-94 J/SST270 Series Typical Characteristics (Cont'd) -2 Output Characteristics VGS = 0 V 0.2 V 0.4 V 0.6 V I D - Drain Current (mA) -2 Output Characteristics VGS = 0 V 1.0 V 1.5 V -1.6 I D - Drain Current (mA) -1.6 0.5 V -1.2 -1.2 2.0 V -0.8 -0.8 0.8 V -0.4 VGS(off) = 1.5 V 0 0 -0.2 -0.4 -0.6 -0.8 -1 VDS - Drain-Source Voltage (V) -0.4 VGS(off) = 3 V 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 VDS - Drain-Source Voltage (V) -25 Output Characteristics 30 VGS(off) = 3 V VGS = 0 V 24 Capacitance (pF) 0.5 V Capacitance vs. Gate-Source Voltage VDS = 0 V f = 1 MHz -20 I D - Drain Current (mA) -15 18 -10 1.0 V 1.5 V 12 Crss 6 Ciss -5 2.0 V 0 0 -4 -8 -12 -16 -20 0 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) Transfer Characteristics -10 VGS(off) = 1.5 V -8 I D - Drain Current (mA) I D - Drain Current (mA) VDS = -15 V -32 -40 Transfer Characteristics VGS(off) = 3 V VDS = -15 V -6 TA = -55_C 25_C -24 TA = -55_C 25_C -4 125_C -2 -16 -8 125_C 0 0 0.2 0.4 0.6 0.8 1.0 VGS - Gate-Source Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) Siliconix P-37405--Rev. B, 04-Jul-94 3 J/SST270 Series Typical Characteristics (Cont'd) 100 g fs - Forward Transconductance (mS) Transconductance vs. Drain Current VGS(off) = 3 V VDS = -15 V f = kHz g os - Output Conductance ( mS) 100 Output Conductance vs. Drain Current VGS(off) = 3 V TA = -55_C 125_C 10 TA = -55_C 10 25_C 25_C 125_C VDS = -15 V f = kHz 1 -0.1 -1 ID - Drain Current (mA) -10 1 -0.1 -1 ID - Drain Current (mA) -10 250 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance vs. Drain Current TA = 25_C rDS(on) - Drain-Source On-Resistance ( W ) 300 On-Resistance vs. Temperature ID = -1 mA rDS changes X 0.7%/_C 240 200 VGS(off) = 1.5 V 180 150 3V 5V 50 VGS(off) = 1.5 V 3V 5V 120 100 60 0 -55 -35 -15 5 25 45 65 85 105 125 TA - Temperature (_C) 0 -1 -10 ID - Drain Current (mA) 100 -100 Noise Voltage vs. Frequency 100 nA 10 nA Gate Leakage Current ID = -0.1 mA -1 mA TA = 125_C ID = -10 mA (nV / Hz) I G - Gate Leakage 1 nA 100 pA 10 pA 1 pA 10 -1 mA IGSS @ 125_C -10 mA TA = 25_C IGSS @ 25_C -1 mA e n - Noise Voltage VDS = -10 V 1 10 100 1k f - Frequency (Hz) 10 k 100 k 0.1 pA 0 -10 -20 -30 -40 -50 VDG - Drain-Gate Voltage (V) 4 Siliconix P-37405--Rev. B, 04-Jul-94 |
Price & Availability of J270
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |